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Proceedings Paper

EUV scanner printability evaluation of natural blank defects detected by actinic blank inspection
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Paper Abstract

In this study, on-wafer printability test results of native blank defects on an EUV reticle, previously detected on the ABI (Actinic blank inspection) tool, were interpreted with on-mask analysis. One of the main factors that affects printability is the relative defect position to the absorber pattern. The ABI tool has been used for this purpose, by means of on-mask review. Subsequently, by removing covered defects (blank defects which are covered with absorber pattern), a clear relationship between DSI (ABI defect signal intensity) and printability was confirmed. By considering a relationship between relative defect position and printability precisely, a tentative printability threshold was defined with DSI. This result suggests that DSI has valuable information to define printability threshold, and shows significance of ABI inspection.

Paper Details

Date Published: 9 July 2015
PDF: 6 pages
Proc. SPIE 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII, 96580F (9 July 2015); doi: 10.1117/12.2197622
Show Author Affiliations
Noriaki Takagi, EUVL Infrastructure Development Ctr., Inc. (Japan)
Hidehiro Watanabe, EUVL Infrastructure Development Ctr., Inc. (Japan)
Dieter Van den Heuvel, IMEC (Belgium)
Rik Jonckheere, IMEC (Belgium)
Emily Gallagher, IMEC (Belgium)

Published in SPIE Proceedings Vol. 9658:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII
Nobuyuki Yoshioka, Editor(s)

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