Share Email Print
cover

Proceedings Paper

Study of defect verification based on lithography simulation with a SEM system
Author(s): Shingo Yoshikawa; Nobuaki Fujii; Koichi Kanno; Hidemichi Imai; Katsuya Hayano; Hiroyuki Miyashita; Soichi Shida; Tsutomu Murakawa; Masayuki Kuribara; Jun Matsumoto; Takayuki Nakamura; Shohei Matsushita; Daisuke Hara; Linyong Pang
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

In a Photomask manufacturing process, mask defect inspection is an increasingly important topic for 193nm optical lithography. Further extension of 193nm optical lithography to the next technology nodes, staying at a maximum numerical aperture (NA) of 1.35, pushes lithography to its utmost limits. This extension from technologies like ILT and SMO requires more complex mask patterns. In mask defect inspection, defect verification becomes more difficult because many nuisance defects are detected in aggressive mask features. One of the solutions is lithography simulation like AIMS. An issue with AIMS, however, is the low throughput of measurement, analysis etc.

Paper Details

Date Published: 9 July 2015
PDF: 7 pages
Proc. SPIE 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII, 96580V (9 July 2015); doi: 10.1117/12.2197617
Show Author Affiliations
Shingo Yoshikawa, Dai Nippon Printing Co., Ltd. (Japan)
Nobuaki Fujii, Dai Nippon Printing Co., Ltd. (Japan)
Koichi Kanno, Dai Nippon Printing Co., Ltd. (Japan)
Hidemichi Imai, Dai Nippon Printing Co., Ltd. (Japan)
Katsuya Hayano, Dai Nippon Printing Co., Ltd. (Japan)
Hiroyuki Miyashita, Dai Nippon Printing Co., Ltd. (Japan)
Soichi Shida, Advantest Corp. (Japan)
Tsutomu Murakawa, Advantest Corp. (Japan)
Masayuki Kuribara, Advantest Corp. (Japan)
Jun Matsumoto, Advantest Corp. (Japan)
Takayuki Nakamura, Advantest Corp. (Japan)
Shohei Matsushita, D2S, K.K. (Japan)
Daisuke Hara, D2S, K.K. (Japan)
Linyong Pang, D2S, Inc. (United States)


Published in SPIE Proceedings Vol. 9658:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII
Nobuyuki Yoshioka, Editor(s)

© SPIE. Terms of Use
Back to Top