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Proceedings Paper

Development of new high transmission eaPSM for Negative Tone Development process on wafer
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Paper Abstract

The retardation of the development of NGL techniques causes the extension of ArF immersion lithography for 1x-nm node. We have been researching the new phase shift mask's (PSM) material for the next generation ArF lithography. In this reports, we developed the low-k, high transmission PSM and evaluate it. The developed new PSM shows good lithographic performance in wafer and high ArF excimer laser durability. The mask processability were confirmed such as the CD performance, the cross section image, the inspection sensitivity and repair accuracy.

Paper Details

Date Published: 9 July 2015
PDF: 6 pages
Proc. SPIE 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII, 96580P (9 July 2015); doi: 10.1117/12.2197611
Show Author Affiliations
Takashi Adachi, Dai Nippon Printing Co., Ltd. (Japan)
Ayako Tani, Dai Nippon Printing Co., Ltd. (Japan)
Yukihiro Fujimura, Dai Nippon Printing Co., Ltd. (Japan)
Shingo Yoshikawa, Dai Nippon Printing Co., Ltd. (Japan)
Katsuya Hayano, Dai Nippon Printing Co., Ltd. (Japan)
Yasutaka Morikawa, Dai Nippon Printing Co., Ltd. (Japan)
Yoichi Miura, Dai Nippon Printing Co., Ltd. (Japan)
Hiroyuki Miyashita, Dai Nippon Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 9658:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII
Nobuyuki Yoshioka, Editor(s)

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