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Proceedings Paper

Mo/Si multilayer mirrors with 300-bilayers for EUV lithography
Author(s): Satoshi Ichimaru; Masatoshi Hatayama; Tadayuki Ohchi; Satoshi Oku
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Paper Abstract

Mo/Si multilayer mirror with 300-bilayers for EUV lithography is developed for the purpose of long-lifetime use in LPP EUV source. The multilayer mirrors are fabricated by a magnetron sputtering method and are characterized by coherence scanning interferometry, XRR and EUV reflectometer. The results show the excellent performance of 320 layer pair multilayer being useful for EUV multilayer mirror.

Paper Details

Date Published: 9 July 2015
PDF: 5 pages
Proc. SPIE 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII, 965814 (9 July 2015); doi: 10.1117/12.2197314
Show Author Affiliations
Satoshi Ichimaru, NTT Advanced Technology Corp. (Japan)
Masatoshi Hatayama, NTT Advanced Technology Corp. (Japan)
Tadayuki Ohchi, NTT Advanced Technology Corp. (Japan)
Satoshi Oku, NTT Advanced Technology Corp. (Japan)


Published in SPIE Proceedings Vol. 9658:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII
Nobuyuki Yoshioka, Editor(s)

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