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Proceedings Paper

Optical proximity correction for extreme ultra-violet mask with pellicle
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Paper Abstract

Extreme ultraviolet (EUV) lithography is considered as one of the viable solutions for production of the next generation integrated devices. EUV mask defect control becomes more critical issue in order to sustain the quality of wafer fabrication process. Since pellicle is the essential component to prevent patterning deformations caused by particle defects on EUV mask[1-2], EUV OPC (optical proximity correction) that takes into account for pellicle effects on imaging quality is required for achieving better pattern fidelity and critical dimension control. In this study, image blurring effect induced by the EUV mask pellicle on mask pattern structures was investigated and it was found that the localized short-range OPC using commercial software performed as desired considering transmission intensity loss due to pellicle. For experiment, edge placement error differences of the same 2D logic patterns with 16 nm half pitch with and without pellicle were compared. Finally, a method was suggested how patterning throughput loss caused by the transmission loss can be compensated by EUV OPC, which may allow pellicle transmission even below 90%.

Paper Details

Date Published: 23 October 2015
PDF: 6 pages
Proc. SPIE 9635, Photomask Technology 2015, 96351F (23 October 2015); doi: 10.1117/12.2196975
Show Author Affiliations
Soo-Yeon Mo, Hanyang Univ. (Korea, Republic of)
In-Seon Kim, Hanyang Univ. (Korea, Republic of)
Hye-Keun Oh, Hanyang Univ. (Korea, Republic of)

Published in SPIE Proceedings Vol. 9635:
Photomask Technology 2015
Naoya Hayashi, Editor(s)

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