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Proceedings Paper

Investigations for an alternative to contact angle measurement after Hexamethyldisilazane deposition
Author(s): H. Aßmann; A. Krause; R. Maurer; M. Dankelmann; M. Specht; W. Usry; R. Newcomb
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Paper Abstract

The adhesion promoter Hexamethyldisilazane (HMDS) plays a crucial role in i-line lithography. According to HMDS deposition forms, a hydrophobic surface defines upwardly directed, non-polar trimethysilyl groups. This condition is of particular importance for wet chemical development and subsequent wet chemical etching processes, because the defined hydrophobic surface prevents water from creeping beneath the resist mask. Undesirable effects, such as (partial) loss of the resist structure or under etching can be prevented. Currently, a common and suitable method to control the success of HMDS deposition is the contact angle measurement. There, a drop of water is applied to the substrate and the contact angle / wetting angle is measured. As a result, conclusions can be drawn about the HMDS process. Unfortunately, however, this simple to implement measurement method raises some problems. The measurement is extremely dependent on the substrate, wherein the measurement results vary greatly. A possible reason for this is the different surface properties of the wafers which are due to adsorbate films. Typically, a contact angle measurement is performed just after the HMDS deposition. A difference between pre- and post-measurement cannot be determined. A deviation of the contact angle can be caused by either an insufficient HMDS seeding, or just as well by other, unknown surface properties. The studies presented here were performed with the measuring system ChemetriQ 5000 from Qcept Technologies. This measurement system was originally developed for Inspection on non-visible defects on the wafer level. It is able to detect differences of work functions as a result of surface coverage by thin film / adsorbate, materials or residues. The change in the surface work function due to the generated adsorbate layer during the HMDS deposition is determined by the measuring system by means of a difference between pre- and post-measurement.

Paper Details

Date Published: 4 September 2015
PDF: 8 pages
Proc. SPIE 9661, 31st European Mask and Lithography Conference, 96610L (4 September 2015); doi: 10.1117/12.2196955
Show Author Affiliations
H. Aßmann, Infineon Technologies Dresden GmbH (Germany)
A. Krause, Infineon Technologies Dresden GmbH (Germany)
R. Maurer, Infineon Technologies Dresden GmbH (Germany)
M. Dankelmann, Infineon Technologies Dresden GmbH (Germany)
M. Specht, Infineon Technologies Dresden GmbH (Germany)
W. Usry, Qcept Technologies Inc. (United States)
R. Newcomb, Qcept Technologies Inc. (United States)


Published in SPIE Proceedings Vol. 9661:
31st European Mask and Lithography Conference
Uwe F.W. Behringer; Jo Finders, Editor(s)

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