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Proceedings Paper

Mask process simulation for mask quality improvement
Author(s): Nobuyasu Takahashi; So Goto; Dai Tsunoda; So-Eun Shin; Sukho Lee; Jungwook Shon; Jisoong Park
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Paper Abstract

Demand for mask process correction (MPC) is growing facing the 14nm era. We have developed model based MPC and can generate mask contours by using this mask process model. This mask process model consists of EB (development) and etch, which employs a threshold (level set) model and a variable bias model respectively. The model calibration tool accepts both CD measurement results and SEM images. The simulation can generate mask image (contour), runs with distributed computing resources, and has scalable performance.

The contour simulation shows the accuracy of the MPC correction visually and provides comprehensive information about hot spots in mask fabrication. Additionally, it is possible to improve lithography simulation quality by providing a simulated mask contour.

In this paper, accuracy and computational performance of mask process simulation are shown. The focus is on the difference between the calibration methods using CDs or images.

Paper Details

Date Published: 23 October 2015
PDF: 8 pages
Proc. SPIE 9635, Photomask Technology 2015, 96351G (23 October 2015); doi: 10.1117/12.2196713
Show Author Affiliations
Nobuyasu Takahashi, Nippon Control System Corp. (Japan)
So Goto, Nippon Control System Corp. (Japan)
Dai Tsunoda, Nippon Control System Corp. (Japan)
So-Eun Shin, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sukho Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jungwook Shon, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jisoong Park, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)

Published in SPIE Proceedings Vol. 9635:
Photomask Technology 2015
Naoya Hayashi, Editor(s)

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