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Proceedings Paper

Mid-infrared GeTe4 waveguides on silicon with a ZnSe isolation layer
Author(s): Vinita Mittal; Chris Craig; Neil P. Sessions; Daniel W. Hewak; James S. Wilkinson; Ganapathy S. Murugan
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Paper Abstract

GeTe4 waveguides were designed and fabricated on silicon substrates with a ZnSe isolation layer. GeTe4 has a refractive index of 3.25 at a wavelength of 9 μm and a lower refractive index isolation layer is needed to realise waveguides on silicon. Numerical modelling was carried out to calculate the thickness of the isolation layer (ZnSe, refractive index ~2.4) required to achieve low loss waveguides. For a loss between 0.1 and 1.0 dB/cm it was found that a ~ 4 μm thick ZnSe film is required at a wavelength of 9 μm. ZnSe thin films were deposited on silicon, GeTe4 waveguides were fabricated by lift-off technique and were characterised for mid-infrared waveguiding.

Paper Details

Date Published: 28 August 2015
PDF: 8 pages
Proc. SPIE 9609, Infrared Sensors, Devices, and Applications V, 96090P (28 August 2015); doi: 10.1117/12.2196663
Show Author Affiliations
Vinita Mittal, Univ. of Southampton (United Kingdom)
Chris Craig, Univ. of Southampton (United Kingdom)
Neil P. Sessions, Univ. of Southampton (United Kingdom)
Daniel W. Hewak, Univ. of Southampton (United Kingdom)
James S. Wilkinson, Univ. of Southampton (United Kingdom)
Ganapathy S. Murugan, Univ. of Southampton (United Kingdom)


Published in SPIE Proceedings Vol. 9609:
Infrared Sensors, Devices, and Applications V
Paul D. LeVan; Ashok K. Sood; Priyalal Wijewarnasuriya; Arvind I. D'Souza, Editor(s)

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