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Proceedings Paper

Defect characterization of Cd0.9Zn0.1Te crystals using electron beam induced current (EBIC) imaging and thermally stimulated current (TSC) measurements
Author(s): Rahmi O. Pak; Khai V. Nguyen; Cihan Oner; Mohammad A. Mannan; Krishna C. Mandal
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Paper Abstract

Semi-insulating Cd0.9Zn0.1Te nuclear detector grade crystals were grown by a low temperature solution method from in-house zone refined (~7N) precursor materials. The processed crystals from the grown ingot were thoroughly characterized by using a non-destructive electron beam induced current (EBIC) contrast imaging method. The EBIC results were correlated with the infrared (IR) transmittance mapping, which confirms the variation of contrasts in EBIC is due to non-uniform distribution of tellurium inclusions in the grown CZT crystal. Electrical characteristics of defect regions in the fabricated detectors were further investigated by I-V measurements, and thermally stimulated current (TSC) measurements. Finally, to demonstrate the high quality of the grown CZT crystals, pulse height spectra (PHS) measurements were carried out using gamma radiation sources of 241Am (59.6 keV) and 137Cs (662 keV).

Paper Details

Date Published: 4 September 2015
PDF: 8 pages
Proc. SPIE 9593, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVII, 95931J (4 September 2015); doi: 10.1117/12.2196590
Show Author Affiliations
Rahmi O. Pak, Univ. of South Carolina (United States)
Khai V. Nguyen, Univ. of South Carolina (United States)
Cihan Oner, Univ. of South Carolina (United States)
Mohammad A. Mannan, Univ. of South Carolina (United States)
Krishna C. Mandal, Univ. of South Carolina (United States)


Published in SPIE Proceedings Vol. 9593:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVII
Larry Franks; Ralph B. James; Michael Fiederle; Arnold Burger, Editor(s)

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