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Proceedings Paper

Surface passivation and isochronal annealing studies on n-type 4H-SiC epitaxial layer
Author(s): Mohammad A. Mannan; Khai V. Nguyen; Rahmi Pak; Cihan Oner; Krishna C. Mandal
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Paper Abstract

Schottky barrier radiation detectors were fabricated on the Si-face of 50 μm thick detector grade n-type 4H-SiC epitaxial layers. The junction properties of the fabricated detectors were investigated by current-voltage (I-V) and capacitancevoltage (C-V) measurements. The radiation detector performances were evaluated by alpha pulse height spectroscopy using a 0.1 μCi 241Am radiation source. Deep level transient spectroscopy (DLTS) measurements were carried out to identify and characterize the electrically active defect levels present in the epitaxial layers. The performance of the detector was found to be limited by the presence of electrically active defect centers in the epilayer. Deep level defects were reduced significantly by isochronal annealing. Surface passivation studies were conducted on n-type 4H-SiC epilayers for use on radiation detectors for the first time. Energy resolution of the detector was found to have improved after passivation and the life time killing defects that were responsible for preventing full charge collection were reduced significantly. Systematic and thorough C-DLTS studies were conducted prior and subsequent to isochronal annealing to observe evolution of the deep level defects.

Paper Details

Date Published: 4 September 2015
PDF: 11 pages
Proc. SPIE 9593, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVII, 95931H (4 September 2015); doi: 10.1117/12.2196582
Show Author Affiliations
Mohammad A. Mannan, Univ. of South Carolina (United States)
Khai V. Nguyen, Univ. of South Carolina (United States)
Rahmi Pak, Univ. of South Carolina (United States)
Cihan Oner, Univ. of South Carolina (United States)
Krishna C. Mandal, Univ. of South Carolina (United States)


Published in SPIE Proceedings Vol. 9593:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVII
Larry Franks; Ralph B. James; Michael Fiederle; Arnold Burger, Editor(s)

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