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Proceedings Paper

Preparation of boron doped silicon films for its application in solar cells
Author(s): Chao Song; Xiang Wang; Yanqing Guo; Jie Song; Rui Huang
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Paper Abstract

Boron-doped a-Si:H thin films were prepared by plasma-enhanced chemical vapor deposition technique. As-deposited samples were thermally annealed at different temperatures from 450 °C to 1000 °C. The microstructures and electrical properties have been evaluated for the amorphous and nano-crystalline structures. It was found that thermal annealing can efficiently activate the dopant in films accompanying with formation of nc-Si grains. During the transition process from amorphous to nano-crystalline structures, the room temperature dark conductivity is increased from 6.6×10-4 S cm-1 to 2.8×102 S cm-1. Based on the properties of p-type silicon films, the P-N junction solar cells were prepared on n-type nc-Si substrate. It was shown that the conversion efficiency is increased monotonously as increasing the annealing temperature. Form the results, it can be implied that the solar cells with higher conversion efficiency can be obtained by using the method of thermal annealing.

Paper Details

Date Published: 22 August 2015
PDF: 6 pages
Proc. SPIE 9656, International Symposium on Photonics and Optoelectronics 2015, 96560H (22 August 2015); doi: 10.1117/12.2196294
Show Author Affiliations
Chao Song, Hanshan Normal Univ. (China)
Xiang Wang, Hanshan Normal Univ. (China)
Yanqing Guo, Hanshan Normal Univ. (China)
Jie Song, Hanshan Normal Univ. (China)
Rui Huang, Hanshan Normal Univ. (China)


Published in SPIE Proceedings Vol. 9656:
International Symposium on Photonics and Optoelectronics 2015
Zhiping Zhou, Editor(s)

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