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Proceedings Paper

Large format MBE HgCdTe on silicon detector development for astronomy
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Paper Abstract

The Center for Detectors at Rochester Institute of Technology and Raytheon Vision Systems (RVS) are leveraging RVS capabilities to produce large format, short-wave infrared HgCdTe focal plane arrays on silicon (Si) substrate wafers. Molecular beam epitaxial (MBE) grown HgCdTe on Si can reduce detector fabrication costs dramatically, while keeping performance competitive with HgCdTe grown on CdZnTe. Reduction in detector costs will alleviate a dominant expense for observational astrophysics telescopes. This paper presents the characterization of 2.5μm cutoff MBE HgCdTe/Si detectors including pre- and post-thinning performance. Detector characteristics presented include dark current, read noise, spectral response, persistence, linearity, crosstalk probability, and analysis of material defects.

Paper Details

Date Published: 28 August 2015
PDF: 15 pages
Proc. SPIE 9609, Infrared Sensors, Devices, and Applications V, 96090Y (28 August 2015); doi: 10.1117/12.2195991
Show Author Affiliations
Brandon J. Hanold, Rochester Institute of Technology (United States)
Donald F. Figer, Rochester Institute of Technology (United States)
Joong Lee, Rochester Institute of Technology (United States)
Kimberly Kolb, Rochester Institute of Technology (United States)
Iain Marcuson, Rochester Institute of Technology (United States)
Elizabeth Corrales, Raytheon Vision Systems (United States)
Jonathan Getty, Raytheon Vision Systems (United States)
Lynn Mears, Raytheon Vision Systems (United States)


Published in SPIE Proceedings Vol. 9609:
Infrared Sensors, Devices, and Applications V
Paul D. LeVan; Ashok K. Sood; Priyalal Wijewarnasuriya; Arvind I. D'Souza, Editor(s)

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