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Proceedings Paper

Multi-beam SEM technology for ultra-high throughput
Author(s): Thomas Kemen; Tomasz Garbowski; Dirk Zeidler
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Paper Abstract

E-beam based technologies are widely used for metrology applications in both wafer fabs and mask shops due to their intrinsic high resolution capabilities. However, the throughput requirements for defect inspection are orders of magnitude higher than what is traditionally achievable with electron beam technologies. We have developed a novel multi-electron beam based technology to address the existing need for high speed imaging of nanoscale patterns. This technique enables ultra-high image acquisition rates which scale with the number of electron beams. In this article the technology development status and imaging results will be shown, including first results with the multi-beam SEM on EUV masks.

Paper Details

Date Published: 9 July 2015
PDF: 6 pages
Proc. SPIE 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII, 965807 (9 July 2015); doi: 10.1117/12.2195705
Show Author Affiliations
Thomas Kemen, Carl Zeiss Microscpy GmbH (Germany)
Tomasz Garbowski, Carl Zeiss Microscpy GmbH (Germany)
Dirk Zeidler, Carl Zeiss Microscpy GmbH (Germany)

Published in SPIE Proceedings Vol. 9658:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII
Nobuyuki Yoshioka, Editor(s)

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