Share Email Print
cover

Proceedings Paper

Influence of unit process interaction on EUV mask performance
Author(s): Pavel Nesládek; Tereza Steinhartová; Haiko Rolff; Thorsten Schedel; Markus Bender
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The EUV mask readiness is ranked under the top three challenges for successful introduction of EUV into high volume manufacturing. Whereas the basic mask manufacturing processes can be principally taken over from optical mask manufacturing, the big amount of new materials incorporated in the relatively complicated EUV mask stack is causing new effects either by their chemical and physical nature, or by their interaction with the processes. Some of the major challenges for EUV mask manufacturing compared to the optical mask is the EUV mask lifetime. First of those is the high illumination energy, which is expected to introduce changes in the mask stack, degradation of the pattern fidelity and reflectivity of the EUV mask. Also EUV mask manufacturing processes influence the mask lifetime. Few of those processes used over decade for successful manufacturing of optical mask can be used for manufacturing of EUV mask, which however will not perform very well and will impact mask lifetime. Interactions between unit processes were identified, influencing not only the pristine mask performance, but impacting their lifetime as well. In our work mainly the interaction between EUV etch and dedicated EUV cleaning process is investigated. Mainly the absorber etch process is dominantly determining the actinic reflectivity and its uniformity across the mask. Additionally the etch process is interacting with the clean process and limits the threshold for mask properties change due to clean process. Finally modification of surface layer and the presence (or absence) of Ru-based capping layer are critical factors for overall EUV mask properties and stability.

Paper Details

Date Published: 9 July 2015
PDF: 9 pages
Proc. SPIE 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII, 965812 (9 July 2015); doi: 10.1117/12.2195634
Show Author Affiliations
Pavel Nesládek, Advanced Mask Technology Ctr. (Germany)
Tereza Steinhartová, Advanced Mask Technology Ctr. (Germany)
Haiko Rolff, Advanced Mask Technology Ctr. (Germany)
Thorsten Schedel, Advanced Mask Technology Ctr. (Germany)
Markus Bender, Advanced Mask Technology Ctr. (Germany)


Published in SPIE Proceedings Vol. 9658:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII
Nobuyuki Yoshioka, Editor(s)

© SPIE. Terms of Use
Back to Top