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Proceedings Paper

Imaging performance of the EUV high NA anamorphic system
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Paper Abstract

This paper presents the predicted imaging performance for an anamorphic EUV high NA (>0.5) exposure system with a 4x magnification in X orientation and a 8x magnification in Y orientation. It has a half field size with which the productivity requirements can be maintained. The main findings of the study are that horizontal and vertical features have very similar process window sizes despite magnification difference. A new definition of the Mask Error Factor (MEF) is introduced that is more relevant for anamorphic imaging; it shows that reticle CD errors have 2x larger impact for vertical compared to horizontal features. For dark field horizontal two-bar trenches relatively small mask induced focus shift was observed compared to the 0.33NA case, probably due to the relatively small Mask Angle of Incidence in the Y orientation with the 8x magnification. Finally a Ni type absorber has potential to further improve imaging performance.

Paper Details

Date Published: 4 September 2015
PDF: 10 pages
Proc. SPIE 9661, 31st European Mask and Lithography Conference, 96610S (4 September 2015); doi: 10.1117/12.2195476
Show Author Affiliations
Koen van Ingen Schenau, ASML Netherlands B.V. (Netherlands)
Gerardo Bottiglieri, ASML Netherlands B.V. (Netherlands)
Jan van Schoot, ASML Netherlands B.V. (Netherlands)
Jens-Timo Neumann, Carl Zeiss SMT GmbH (Germany)
Matthias Roesch, Car Zeiss SMT GmbH (Germany)

Published in SPIE Proceedings Vol. 9661:
31st European Mask and Lithography Conference
Uwe F.W. Behringer; Jo Finders, Editor(s)

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