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Proceedings Paper

Printability evaluation of programmed defects on OMOG masks
Author(s): Irene Shi; Eric Guo; Max Lu; Catherine Ren; Bojan Yan; Rivan Li; Eric Tian
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Paper Abstract

Opaque Mosi on Glass (OMOG) photomask, significantly less prone to mask degradation, has been applied in leading-edge photolithographic flows on 20 nm and 14 nm node. Mask defect problem occurs at any time, rooted in various causes; therefore, defect printability disposition and verification need to be evaluated for new developing process. A series of programmed defects with typical sizes and shapes have been established for different mask patterns on OMOG masks and investigated for the defect printability influences through the CDSEM, AIMS and inspection tools. The results are compiled to produce the defect specifications that can be implemented on OMOG mask fabrication.

Paper Details

Date Published: 23 October 2015
PDF: 9 pages
Proc. SPIE 9635, Photomask Technology 2015, 96351M (23 October 2015); doi: 10.1117/12.2194073
Show Author Affiliations
Irene Shi, Semiconductor Manufacturing International Corp. (China)
Eric Guo, Semiconductor Manufacturing International Corp. (China)
Max Lu, Semiconductor Manufacturing International Corp. (China)
Catherine Ren, Semiconductor Manufacturing International Corp. (China)
Bojan Yan, Semiconductor Manufacturing International Corp. (China)
Rivan Li, Semiconductor Manufacturing International Corp. (China)
Eric Tian, Semiconductor Manufacturing International Corp. (China)


Published in SPIE Proceedings Vol. 9635:
Photomask Technology 2015
Naoya Hayashi, Editor(s)

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