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Proceedings Paper

Excimer laser annealing of ZnO films prepared by sputtering process
Author(s): Jingzhen Shao; Xiaodong Fang; Xi Wang
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Paper Abstract

Excimer laser with nanosecond pulse duration can induce low thermal budget processing and heating confinement near the surface region, which make excimer laser annealing process suitable for low-temperature growth of oxide films. This work presented 248 nm KrF excimer laser irradiation processes of ZnO films prepared by a DC magnetron sputtering method. The influence of the laser energy densities on the structural, morphology, optical and electrical characteristics of ZnO films were investigated. The results presented that the crystallinity of ZnO films could be raised obviously by the excimer laser annealing process. The film under laser irradiation with 137 mJ/cm2 outputs showed the lowest sheet resistance of 10 kΩ/□ and high visible transmittance (~77.4%). This study indicated that excimer laser annealing is a useful method for the performance improvement of oxide films.

Paper Details

Date Published: 5 August 2015
PDF: 6 pages
Proc. SPIE 9621, 2015 International Conference on Optical Instruments and Technology: Advanced Lasers and Applications, 96210E (5 August 2015); doi: 10.1117/12.2193247
Show Author Affiliations
Jingzhen Shao, Anhui Institute of Optics and Fine Mechanics (China)
Xiaodong Fang, Anhui Institute of Optics and Fine Mechanics (China)
Univ. of Science and Technology of China (China)
Xi Wang, Anhui Institute of Optics and Fine Mechanics (China)
State Key Lab. of Pulsed Power Laser Technology (China)


Published in SPIE Proceedings Vol. 9621:
2015 International Conference on Optical Instruments and Technology: Advanced Lasers and Applications
Jianqiang Zhu; Chunqing Gao, Editor(s)

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