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Proceedings Paper

Design and development of wafer-level near-infrared micro-camera
Author(s): John W. Zeller; Caitlin Rouse; Harry Efstathiadis; Pradeep Haldar; Nibir K. Dhar; Jay S. Lewis; Priyalal Wijewarnasuriya; Yash R. Puri; Ashok K. Sood
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Paper Abstract

SiGe offers a low-cost alternative to conventional infrared sensor material systems such as InGaAs, InSb, and HgCdTe for developing near-infrared (NIR) photodetector devices that do not require cooling and can offer high bandwidths and responsivities. As a result of the significant difference in thermal expansion coefficients between germanium and silicon, tensile strain incorporated into Ge epitaxial layers deposited on Si utilizing specialized growth processes can extend the operational range of detection to 1600 nm and longer wavelengths. We have fabricated SiGe based PIN detector devices on 300 mm diameter Si wafers in order to take advantage of high throughput, large-area complementary metal-oxide semiconductor (CMOS) technology. This device fabrication process involves low temperature epitaxial deposition of Ge to form a thin p+ seed/buffer layer, followed by higher temperature deposition of a thicker Ge intrinsic layer. An n+-Ge layer formed by ion implantation of phosphorus, passivating oxide cap, and then top copper contacts complete the PIN photodetector design. Various techniques including transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) have been employed to characterize the material and structural properties of the epitaxial growth and fabricated detector devices. In addition, electrical characterization was performed to compare the I-V dark current vs. photocurrent response as well as the time and wavelength varying photoresponse properties of the fabricated devices, results of which are likewise presented.

Paper Details

Date Published: 28 August 2015
PDF: 9 pages
Proc. SPIE 9609, Infrared Sensors, Devices, and Applications V, 96090O (28 August 2015); doi: 10.1117/12.2193179
Show Author Affiliations
John W. Zeller, Magnolia Optical Technologies, Inc. (United States)
Caitlin Rouse, State Univ. of New York Polytechnic Institute (United States)
Harry Efstathiadis, State Univ. of New York Polytechnic Institute (United States)
Pradeep Haldar, State Univ. of New York Polytechnic Institute (United States)
Nibir K. Dhar, U.S. Army Night Vision & Electronic Sensors Directorate (United States)
Jay S. Lewis, Defense Advanced Research Projects Agency (United States)
Priyalal Wijewarnasuriya, U.S. Army Research Lab. (United States)
Yash R. Puri, Magnolia Optical Technologies, Inc. (United States)
Ashok K. Sood, Magnolia Optical Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 9609:
Infrared Sensors, Devices, and Applications V
Paul D. LeVan; Ashok K. Sood; Priyalal Wijewarnasuriya; Arvind I. D'Souza, Editor(s)

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