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Proceedings Paper

The method of quartz damage recovery in the photomask repair process
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Paper Abstract

As the pattern size became gradually smaller, the defect detectability of the photomask inspection tool was more improved. For these reasons, we have to repair various defects more precisely. By improving the mask yield through the repair process, we can reduce the cost of mask fabrication. In this study, we studied the defect called quartz damage which distorts the AIMSTM (Arial Image Measurement System) intensity of the repaired pattern and causes the scrap of the photomask. The quartz damage is generally observed when the abnormal defects like particles were repaired in the poor repairing condition. The quartz damage occasionally results in repair errors and affects the AIMS intensity. Currently there is no clear solution for recovering the quartz damage. As a result, it is very difficult to get the high quality photomask if the quartz damage is generated on the photomask. Therefore, it is important to find a method of recovering the quartz damage for producing the high quality photomask. In this paper, we demonstrated that the quartz damage can be recovered through the TEOS (Tetraethoxysilane) gas deposition. Also we investigated the effect on the recovery of the quartz damage of various parameters such as the type and the depth of the quartz damage as well as the repair conditions of the TEOS gas deposition.

Paper Details

Date Published: 9 July 2015
PDF: 8 pages
Proc. SPIE 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII, 965806 (9 July 2015); doi: 10.1117/12.2193081
Show Author Affiliations
Hoon Namkung, SK Hynix, Inc. (Korea, Republic of)
MunSik Kim, SK Hynix, Inc. (Korea, Republic of)
EuiSang Park, SK Hynix, Inc. (Korea, Republic of)
HoYong Jung, SK Hynix, Inc. (Korea, Republic of)
SangPyo Kim, SK Hynix, Inc. (Korea, Republic of)
DongGyu Yim, SK Hynix, Inc. (Korea, Republic of)


Published in SPIE Proceedings Vol. 9658:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII
Nobuyuki Yoshioka, Editor(s)

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