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Proceedings Paper

Tantalum oxide nanoscale resistive switching devices: TEM/EELS study (Presentation Recording)
Author(s): Kate J Norris; Jiaming Zhang; Emmanuelle Merced-Grafals; Srinitya Musunuru; Max Zhang; Katy Samuels; Jianhua J Yang; Nobuhiko P Kobayashi

Paper Abstract

The field of non-volatile memory devices has been boosted by resistive switching, a reversible change in electrical resistance of a dielectric layer through the application of a voltage potential. Tantalum oxide being one of the leading candidates for the dielectric component of resistance switching devices was investigated in this study. 55nm TaOx devices in all states were compared through cross sectional TEM techniques including HRTEM, EELS, and EFTEM and will be discussed in this presentation. Based on the chemical and physical features found in the cross sectioned nanodevices we will discuss the switching mechanism of these nanoscale devices.

Paper Details

Date Published: 5 October 2015
PDF: 1 pages
Proc. SPIE 9553, Low-Dimensional Materials and Devices, 95530V (5 October 2015); doi: 10.1117/12.2192488
Show Author Affiliations
Kate J Norris, Univ of California Santa Cruz (United States)
Jiaming Zhang, Hewlett-Packard Laboratories (United States)
Emmanuelle Merced-Grafals, Hewlett-Packard Laboratories (United States)
Srinitya Musunuru, Hewlett-Packard Laboratories (United States)
Max Zhang, Hewlett-Packard Laboratories (United States)
Katy Samuels, Hewlett-Packard Laboratories (United States)
Jianhua J Yang, Hewlett-Packard Laboratories (United States)
Nobuhiko P Kobayashi, Univ of California Santa Cruz (United States)


Published in SPIE Proceedings Vol. 9553:
Low-Dimensional Materials and Devices
Nobuhiko P. Kobayashi; A. Alec Talin; M. Saif Islam; Albert V. Davydov, Editor(s)

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