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Proceedings Paper

design of optical component structure for AlxGa1-xN photocathodes
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Paper Abstract

AlxGa1-xN photocathode was prepared by MOCVD and the reflectivity, transmittance, and absorptivity were test. Based on thin film principle, optical model of t-mode AlxGa1-xN photocathodes was built, and then optical properties and quantum efficiencies were simulated. Results show that AlxGa1-xN photocathodes satisfy the need of detectors with “solar blind” property when the Al component is larger than 0.250. There is an optimal thickness of AlxGa1-xN layer to obtain highest quantum efficiency, and the optimal thickness is 0.3μm. There is close relation between absorptivity and quantum efficiency, which is in good agreement with the “three-step” model. This work gives a reference for the design and preparation of AlxGa1-xN photocathodes.

Paper Details

Date Published: 29 July 2015
PDF: 6 pages
Proc. SPIE 9659, International Conference on Photonics Solutions 2015, 965918 (29 July 2015); doi: 10.1117/12.2192196
Show Author Affiliations
Mingzhu Yang, Nanjing Univ. of Science and Technology (China)
Benkang Chang, Nanjing Univ. of Science and Technology (China)
Guanghui Hao, Nanjing Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 9659:
International Conference on Photonics Solutions 2015
Surasak Chiangga; Sarun Sumriddetchkajorn, Editor(s)

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