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Proceedings Paper

MOCVD grown HgCdTe p+BnN+ barrier detector for MWIR HOT operation
Author(s): M. Kopytko; A. Kębłowski; W. Gawron; P. Martyniuk; P. Madejczyk; K. Jóźwikowski; O. Markowska; A. Rogalski
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Paper Abstract

The work reports on mid-wavelength infrared HgCdTe barrier detectors with a zero valence band offset, grown by metal organic chemical vapour deposition on GaAs substrates. The experiments indicate the influence of the barrier on electrical and optical performances of the p+BnN+ device. The devices exhibit very low dark current densities in the range of (2÷3)×10–3 A/cm2 at 300 K and a high current responsivity of about 2A/W in the wide range of reverse bias voltage. The estimated thermal activation energy of about 0.33 eV is close to the full Hg0.64Cd0.36Te bandgap, what indicates diffusion limited dark currents.

Paper Details

Date Published: 4 June 2015
PDF: 7 pages
Proc. SPIE 9451, Infrared Technology and Applications XLI, 945117 (4 June 2015); doi: 10.1117/12.2192152
Show Author Affiliations
M. Kopytko, Military Univ. of Technology (Poland)
A. Kębłowski, Vigo System S.A. (Poland)
W. Gawron, Military Univ. of Technology (Poland)
P. Martyniuk, Military Univ. of Technology (Poland)
P. Madejczyk, Military Univ. of Technology (Poland)
K. Jóźwikowski, Military Univ. of Technology (Poland)
O. Markowska, Military Univ. of Technology (Poland)
A. Rogalski, Military Univ. of Technology (Poland)

Published in SPIE Proceedings Vol. 9451:
Infrared Technology and Applications XLI
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton, Editor(s)

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