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Proceedings Paper

Traveling wave model of uni-traveling carrier photodiode
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Paper Abstract

A traveling wave time domain model of bulk InGaAs/InP uni-traveling carrier photodiode is presented in terms of integral carrier density rate equation. The wavelength dependent responsivity at different absorption width has been derived from quantum mechanical principle. Output photocurrent response with time is found in close agreement with the experimental value.

Paper Details

Date Published: 15 June 2015
PDF: 4 pages
Proc. SPIE 9654, International Conference on Optics and Photonics 2015, 96541L (15 June 2015); doi: 10.1117/12.2192139
Show Author Affiliations
Senjuti Khanra, Univ. of Calcutta (India)
Abhirup Das Barman, Univ. of Calcutta (India)


Published in SPIE Proceedings Vol. 9654:
International Conference on Optics and Photonics 2015
Kallol Bhattacharya, Editor(s)

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