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Proceedings Paper

Structural modulation of nanowire interfaces grown over selectively disrupted single crystal surfaces
Author(s): E. Garratt; B. Nikoobakht
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Paper Abstract

Recent breakthroughs in deterministic approaches to the fabrication of nanowire arrays have demonstrated the possibility of fabricating such networks using low-cost scalable methods. In this regard, we have developed a scalable growth platform for lateral fabrication of nanocrystals with high precision utilizing lattice match and symmetry. Using this planar architecture, a number of homo- and heterostructures have been demonstrated including ZnO nanowires grown over GaN. The latter combination produces horizontal, epitaxially formed crystals aligned in the plane of the substrate containing a very low number of intrinsic defects. We use such ordered structures as model systems in the interests of gauging the interfacial structural dynamics in relation to external stimuli. Nanosecond pulses of focused ion beams are used to slightly modify the substrate surface and selectively form lattice disorders in the path of nanowire growth to examine the nanocrystal, namely: its directionality and lattice defects. High resolution electron microscopies are used to reveal some interesting structural effects; for instance, a minimum threshold of surface defects that can divert nanowires. We also discuss data indicating formation of surface strains and show their mitigation during the growth process.

Paper Details

Date Published: 26 August 2015
PDF: 6 pages
Proc. SPIE 9553, Low-Dimensional Materials and Devices, 955303 (26 August 2015); doi: 10.1117/12.2192013
Show Author Affiliations
E. Garratt, National Institute of Standards and Technology (United States)
B. Nikoobakht, National Institute of Standards and Technology (United States)


Published in SPIE Proceedings Vol. 9553:
Low-Dimensional Materials and Devices
Nobuhiko P. Kobayashi; A. Alec Talin; M. Saif Islam; Albert V. Davydov, Editor(s)

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