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Proceedings Paper

Effect of p-GaN layer doping on the photoresponse of GaN-based p-i-n ultraviolet photodetectors
Author(s): Jun Wang; Jin Guo; Feng Xie; Wanjun Wang; Guosheng Wang; Haoran Wu; Tanglin Wang; Man Song
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Paper Abstract

We report on two-dimensional (2D) numerical simulations of photoresponse characteristics for GaN based p-i-n ultraviolet (UV) photodetectors. Effects of doping density of p-GaN layer on the photoresponse have been investigated. In order to accurately simulate the device performance, the theoretical calculation includes doping-dependent mobility degradation by Arora model and high field saturation model. Theoretical modeling shows that the doping density of p- GaN layer can significantly affect the photoresponse of GaN based p-i-n UV photodetectors, especially at schottky contact. We have to make a suitable choice of the doping in the device design according to the simulation results.

Paper Details

Date Published: 10 August 2015
PDF: 6 pages
Proc. SPIE 9620, 2015 International Conference on Optical Instruments and Technology: Optical Sensors and Applications, 96200U (10 August 2015); doi: 10.1117/12.2191941
Show Author Affiliations
Jun Wang, China Electronics Technology Group Corp. (China)
Jin Guo, China Electronics Technology Group Corp. (China)
Feng Xie, China Electronics Technology Group Corp. (China)
Wanjun Wang, China Electronics Technology Group Corp. (China)
Guosheng Wang, China Electronics Technology Group Corp. (China)
Haoran Wu, China Electronics Technology Group Corp. (China)
Tanglin Wang, China Electronics Technology Group Corp. (China)
Man Song, China Electronics Technology Group Corp. (China)


Published in SPIE Proceedings Vol. 9620:
2015 International Conference on Optical Instruments and Technology: Optical Sensors and Applications
Xuping Zhang; David Erickson; Xudong Fan; Zhongping Chen, Editor(s)

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