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Proceedings Paper

Ordered arrays of bottom-up III-nitride core-shell nanostructures
Author(s): Ashwin K. Rishinaramangalam; Mohsen Nami; Benjamin N. Bryant; Rhett F. Eller; Darryl M. Shima; Michael N. Fairchild; Ganesh Balakrishnan; S. R. J. Brueck; Daniel F. Feezell
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Paper Abstract

The growth of ordered arrays of group III-nitride nanostructures on c-plane gallium nitride (GaN) on sapphire using selective-area metal organic chemical vapor deposition (MOCVD) is presented. The growth of these nanostructures promotes strain relaxation that allows the combination of high indium content active regions with very low dislocation densities and also gives access to nonpolar and semipolar crystallographic orientations of GaN. The influence of the starting template and the growth conditions on the growth rate and morphology is discussed. The growth of indium gallium nitride (InGaN) active region shells on these nanostructures is discussed and the stability of various crystallographic orientations under typical growth conditions is studied. Finally, the effect of the growth conditions on the morphology of pyramidal stripe LEDs is discussed and preliminary results on electrical injection of these LEDs are presented.

Paper Details

Date Published: 26 August 2015
PDF: 9 pages
Proc. SPIE 9553, Low-Dimensional Materials and Devices, 955308 (26 August 2015); doi: 10.1117/12.2191726
Show Author Affiliations
Ashwin K. Rishinaramangalam, The Univ. of New Mexico (United States)
Mohsen Nami, The Uni.v of New Mexico (United States)
Benjamin N. Bryant, The Univ. of New Mexico (United States)
Rhett F. Eller, The Univ. of New Mexico (United States)
Darryl M. Shima, The Univ. of New Mexico (United States)
Michael N. Fairchild, The Univ. of New Mexico (United States)
Ganesh Balakrishnan, The Univ. of New Mexico (United States)
S. R. J. Brueck, The Univ. of New Mexico (United States)
Daniel F. Feezell, The Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 9553:
Low-Dimensional Materials and Devices
Nobuhiko P. Kobayashi; A. Alec Talin; M. Saif Islam; Albert V. Davydov, Editor(s)

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