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Proceedings Paper

Extended defect structures observed in (AlxGa1-x)0.5In0.5P light emitting diodes grown by MOVPE (Presentation Recording)
Author(s): Andreas Rudolph

Paper Abstract

Scanning transmission electron microscopy (STEM) annular dark field (ADF), high angle annular dark field (HAADF), cathodoluminescence (CL) and energy-dispersive X-ray spectroscopy (EDX) analysis were carried out to investigate the structural and optical properties of (AlxGa1-x)0.5In0.5P light emitting diodes (LEDs). Extended defect structures were observed in the LED active region, which exhibit defect emission that is shifted by 0.25 eV relative to the multi quantum well (MQW) emission. The morphology and composition of the defect structures was elucidated and the results confirmed by growth experiments and photoluminescence (PL) measurements.

Paper Details

Date Published: 5 October 2015
PDF: 1 pages
Proc. SPIE 9553, Low-Dimensional Materials and Devices, 95530W (5 October 2015); doi: 10.1117/12.2191527
Show Author Affiliations
Andreas Rudolph, OSRAM Opto Semiconductors GmbH (Germany)

Published in SPIE Proceedings Vol. 9553:
Low-Dimensional Materials and Devices
Nobuhiko P. Kobayashi; A. Alec Talin; M. Saif Islam; Albert V. Davydov, Editor(s)

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