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Proceedings Paper

Investigating photoluminescence quantum yield of silicon nanocrystals formed in SiOx with different initial Si excess
Author(s): Nguyen Xuan Chung; Rens Limpens; Tom Gregorkiewicz
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Paper Abstract

Optical properties of silicon nanocrystals dispersed in SiO2 matrix were investigated in terms of photoluminescence quantum yield at room temperature. Two multilayer samples, prepared from substoichiometric silicon oxide layers by annealing at 1150°C were used to investigate the influence of Si concentration. Significant reduction of photoluminescence quantum yield and a very specific change of its excitation energy dependence upon variation of silicon excess are concluded from the experimental data. Possible mechanisms leading to these changes are discussed.

Paper Details

Date Published: 4 September 2015
PDF: 6 pages
Proc. SPIE 9562, Next Generation Technologies for Solar Energy Conversion VI, 95620O (4 September 2015); doi: 10.1117/12.2191105
Show Author Affiliations
Nguyen Xuan Chung, Univ. of Amsterdam (Netherlands)
Rens Limpens, Univ. of Amsterdam (Netherlands)
Tom Gregorkiewicz, Univ. of Amsterdam (Netherlands)

Published in SPIE Proceedings Vol. 9562:
Next Generation Technologies for Solar Energy Conversion VI
Oleg V. Sulima; Gavin Conibeer, Editor(s)

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