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Proceedings Paper

Evaluation of a single-pixel one-transistor active pixel sensor for low-dose indirect-conversion X-ray imaging
Author(s): Xinghui Liu; Hai Ou; Jun Chen; Kai Wang
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Paper Abstract

We designed and fabricated a dual-gate photosensitive TFT with active amorphous silicon thickness of 240nm and W/L ratio of 250μm/20μm by using a conventional six-mask photography microfabrication process. A single-pixel sensor was tested under different light conditions to mimic the real situation of X-ray exposure via the scintillator. The results demonstrate the capability of using dual-gate photosensitive TFT to acquire an X-ray image indirectly.

Paper Details

Date Published: 5 August 2015
PDF: 6 pages
Proc. SPIE 9622, 2015 International Conference on Optical Instruments and Technology: Optoelectronic Imaging and Processing Technology, 962208 (5 August 2015); doi: 10.1117/12.2190775
Show Author Affiliations
Xinghui Liu, Sun Yat-Sen Univ.-Carnegie Mellon Univ. Shunde International Joint Research Institute (China)
Hai Ou, Sun Yat-Sen Univ. (China)
Jun Chen, Sun Yat-Sen Univ. (China)
Kai Wang, Sun Yat-Sen Univ.-Carnegie Mellon Univ. Shunde International Joint Research Institute (China)
Sun Yat-Sen Univ. (China)


Published in SPIE Proceedings Vol. 9622:
2015 International Conference on Optical Instruments and Technology: Optoelectronic Imaging and Processing Technology
Guangming Shi; Xuelong Li; Bormin Huang, Editor(s)

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