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Proceedings Paper

Tin disulfide thin films via soft chalcogenization
Author(s): Zafer Mutlu; Mihrimah Ozkan; Cengiz S. Ozkan
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Paper Abstract

Tin disulfide displays a wide range of attractive physical and chemical properties and are potentially important for various device applications including nanoelectronics, optoelectronics, as well as energy conversion. Here, we report on the largescale synthesis of tin disulfide granular thin films on silicon dioxide substrates by soft chalcogenization method in which the pre-deposited tin thin films are transformed into tin disulfide thin films via exposure to sulfur vapor. The obtained tin disulfide films have been comprehensively characterized to study their fundamental properties in detail by using atomic force microscopy, scanning electron microcopy, Raman spectroscopy, photoluminescence spectroscopy and X-ray photoelectron spectroscopy.

Paper Details

Date Published: 16 September 2015
PDF: 6 pages
Proc. SPIE 9552, Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices VIII, 95520N (16 September 2015); doi: 10.1117/12.2190598
Show Author Affiliations
Zafer Mutlu, Univ. of California, Riverside (United States)
Mihrimah Ozkan, Univ. of California, Riverside (United States)
Cengiz S. Ozkan, Univ. of California, Riverside (United States)


Published in SPIE Proceedings Vol. 9552:
Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices VIII
Manijeh Razeghi; Maziar Ghazinejad; Can Bayram; Jae Su Yu; Young Hee Lee, Editor(s)

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