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Proceedings Paper

Flexible and stackable non-volatile resistive memory for high integration
Author(s): Shawkat Ali; Jinho Bae; Chong Hyun Lee
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Paper Abstract

We propose a novel flexible and stackable resistive random access memory (ReRAM) array with multi-layered crossbar structures fabricated on a PET flexible substrate through EHD system. The basic memory block of the proposed device is based on one resistor and multi-layered column memristors (1R-MCM) structure, which can be easily extended to 3 dimensional columns for a high integration. To fabricate the device, the materials Ag for top and bottom electrodes, PVP for memristor, and (MEH:PPV and PMMA in acetonitrile) for pull-up resistors are used. Memory single cell is consisted of a high OFF/ON ratio (~4663) memristor and a pull-up resistor (20 MΩ) that operate on the principles of voltage divider circuit. Memory logic data is retrieve in the form of voltage levels instead of sensing current the of crossbar array. Two memory crossbar arrays are stacked vertically and they are sharing column bars, each column’s memristors are with a single pull-up resistor. A 3x3 stacked memory with two layers that can store 18 bits of data is demonstrated to realize on a small area for a high integration.

Paper Details

Date Published: 26 August 2015
PDF: 4 pages
Proc. SPIE 9553, Low-Dimensional Materials and Devices, 95530T (26 August 2015); doi: 10.1117/12.2190399
Show Author Affiliations
Shawkat Ali, Jeju National Univ. (Korea, Republic of)
Jinho Bae, Jeju National Univ. (Korea, Republic of)
Chong Hyun Lee, Jeju National Univ. (Korea, Republic of)

Published in SPIE Proceedings Vol. 9553:
Low-Dimensional Materials and Devices
Nobuhiko P. Kobayashi; A. Alec Talin; M. Saif Islam; Albert V. Davydov, Editor(s)

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