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Proceedings Paper

Memristor memory element based on ZnO thin film structures
Author(s): A. R. Poghosyan; E. Y. Elbakyan; R. Guo; R. K. Hovsepyan
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Paper Abstract

The memristor element for random access memory (resistance random access memory - ReRAM) was developed and investigated. The developed structure consists of a Schottky diode (1D) based on Pt/ZnO:Ga/ZnO/Pt heterostructure and a memristor (1R) based on Pt/ZnO:Ga/ZnO/ZnO:Li/Pt heterostructure. Thus the unipolar memristor memory element of 1D1R type was obtained. The heterostructures were produced by the electron-beam vacuum deposition method. The laboratory samples of the memory elements were prepared and their characteristics were studied. The proposed device has a high stability and withstands 1000 switching cycles without derating.

Paper Details

Date Published: 26 August 2015
PDF: 5 pages
Proc. SPIE 9586, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IX, 95861C (26 August 2015); doi: 10.1117/12.2190111
Show Author Affiliations
A. R. Poghosyan, Institute for Physical Research (Armenia)
E. Y. Elbakyan, Institute for Physical Research (Armenia)
R. Guo, The Univ. of Texas at San Antonio (United States)
R. K. Hovsepyan, Institute for Physical Research (Armenia)


Published in SPIE Proceedings Vol. 9586:
Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications IX
Shizhuo Yin; Ruyan Guo, Editor(s)

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