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Proceedings Paper

Proton irradiation of MWIR HgCdTe/CdZnTe
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Paper Abstract

High performance infrared sensors are vulnerable to slight changes in defect densities and locations. For example in a space application where such sensors are exposed to proton irradiation capable of generating point defects the sensors are known to suffer performance degradation. The degradation can generally be observed in terms of dark current density and responsivity degradations. Here we report results of MWIR HgCdTe/CdZnTe single element diodes dark current densities before and after exposure to 63MeV protons at room temperature to a total ionizing dose of 100 kRad(Si). We find the irradiated diodes as a group show some signs of proton-induced damage in dark current.

Paper Details

Date Published: 1 September 2015
PDF: 8 pages
Proc. SPIE 9616, Nanophotonics and Macrophotonics for Space Environments IX, 96160E (1 September 2015); doi: 10.1117/12.2189829
Show Author Affiliations
Stephen Fahey, EPIR Technologies, Inc. (United States)
Silviu Velicu, EPIR Technologies, Inc. (United States)
Ramana Bommena, EPIR Technologies, Inc. (United States)
Jun Zhao, EPIR Technologies, Inc. (United States)
Vincent Cowan, Air Force Research Lab. (United States)
Christian Morath, Air Force Research Lab. (United States)
Sivalingam Sivananthan, EPIR Technologies, Inc. (United States)


Published in SPIE Proceedings Vol. 9616:
Nanophotonics and Macrophotonics for Space Environments IX
Edward W. Taylor; David A. Cardimona, Editor(s)

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