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Proceedings Paper

A model for traumatic brain injury using laser induced shockwaves
Author(s): A. Selfridge; D. Preece; V. Gomez; L. Z. Shi; M. W. Berns
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Paper Abstract

Traumatic brain injury (TBI) represents a major treatment challenge in both civilian and military medicine; on the cellular level, its mechanisms are poorly understood. As a method to study the dysfunctional repair mechanisms following injury, laser induced shock waves (LIS) are a useful way to create highly precise, well characterized mechanical forces. We present a simple model for TBI using laser induced shock waves as a model for damage. Our objective is to develop an understanding of the processes responsible for neuronal death, the ways in which we can manipulate these processes to improve cell survival and repair, and the importance of these processes at different levels of biological organization. The physics of shock wave creation has been modeled and can be used to calculate forces acting on individual neurons. By ensuring that the impulse is in the same regime as that occurring in practical TBI, the LIS model can ensure that in vitro conditions and damage are similar to those experienced in TBI. This model will allow for the study of the biochemical response of neurons to mechanical stresses, and can be combined with microfluidic systems for cell growth in order to better isolate areas of damage.

Paper Details

Date Published: 25 August 2015
PDF: 11 pages
Proc. SPIE 9548, Optical Trapping and Optical Micromanipulation XII, 95480P (25 August 2015); doi: 10.1117/12.2189724
Show Author Affiliations
A. Selfridge, Univ. of California, San Diego (United States)
D. Preece, Univ. of California, San Diego (United States)
V. Gomez, Univ. of California, San Diego (United States)
L. Z. Shi, Univ. of California, San Diego (United States)
M. W. Berns, Univ. of California, San Diego (United States)
Univ. of California, Irvine (United States)

Published in SPIE Proceedings Vol. 9548:
Optical Trapping and Optical Micromanipulation XII
Kishan Dholakia; Gabriel C. Spalding, Editor(s)

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