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Proceedings Paper

High linearly polarized light emission from GaN-based LED with patterned dielectric/metal structures
Author(s): Miao Wang; Bing Cao; Fuyang Xu; Jingpei Hu; Jianfeng Wang; Ke Xu; Chinhua Wang
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Paper Abstract

We proposed and demonstrated an integrated high linearly polarized InGaN/GaN green LED grown on (0001) oriented sapphire with a structure of combined dielectric/metal wire grids (CDMWG). Both theoretical and experimental results show that the CDMWG can effectively loosen the requirement on the dimension of the grating, and the introduction of a low-refractive dielectric layer can further enhance both TMT and ER significantly for the GaN-type LED. An InGaN/ GaN green LED with an integrated CDMWG of 220 nm period has been fabricated, and a measured extinction ratio(ER) of higher than 20 dB and TMT of 65% within an angle of ±40° is obtained directly from a InGaN/GaN LED.

Paper Details

Date Published: 17 July 2015
PDF: 8 pages
Proc. SPIE 9524, International Conference on Optical and Photonic Engineering (icOPEN 2015), 952414 (17 July 2015); doi: 10.1117/12.2189257
Show Author Affiliations
Miao Wang, Soochow Univ. (China)
Bing Cao, Soochow Univ. (China)
Fuyang Xu, Soochow Univ. (China)
Jingpei Hu, Soochow Univ. (China)
Jianfeng Wang, Suzhou Institute of Nano-Tech and Nano-Bionics (China)
Ke Xu, Suzhou Institute of Nano-Tech and Nano-Bionics (China)
Chinhua Wang, Soochow Univ. (China)


Published in SPIE Proceedings Vol. 9524:
International Conference on Optical and Photonic Engineering (icOPEN 2015)
Anand K. Asundi; Yu Fu, Editor(s)

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