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Proceedings Paper

Recent progress in high gain InAs avalanche photodiodes (Presentation Recording)
Author(s): Seth Bank; Scott J. Maddox; Wenlu Sun; Hari P. Nair; Joe C. Campbell
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Paper Abstract

InAs possesses nearly ideal material properties for the fabrication of near- and mid-infrared avalanche photodiodes (APDs), which result in strong electron-initiated impact ionization and negligible hole-initiated impact ionization [1]. Consequently, InAs multiplication regions exhibit several appealing characteristics, including extremely low excess noise factors and bandwidth independent of gain [2], [3]. These properties make InAs APDs attractive for a number of near- and mid-infrared sensing applications including remote gas sensing, light detection and ranging (LIDAR), and both active and passive imaging. Here, we discuss our recent advances in the growth and fabrication of high gain, low noise InAs APDs. Devices yielded room temperature multiplication gains >300, with much reduced (~10x) lower dark current densities. We will also discuss a likely key contributor to our current performance limitations: silicon diffusion into the intrinsic (multiplication) region from the underlying n-type layer during growth. Future work will focus on increasing the intrinsic region thickness, targeting gains >1000. This work was supported by the Army Research Office (W911NF-10-1-0391). [1] A. R. J. Marshall, C. H. Tan, M. J. Steer, and J. P. R. David, “Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes,” Applied Physics Letters, vol. 93, p. 111107, 2008. [2] A. R. J. Marshall, A. Krysa, S. Zhang, A. S. Idris, S. Xie, J. P. R. David, and C. H. Tan, “High gain InAs avalanche photodiodes,” in 6th EMRS DTC Technical Conference, Edinburgh, Scotland, UK, 2009. [3] S. J. Maddox, W. Sun, Z. Lu, H. P. Nair, J. C. Campbell, and S. R. Bank, “Enhanced low-noise gain from InAs avalanche photodiodes with reduced dark current and background doping,” Applied Physics Letters, vol. 101, no. 15, pp. 151124–151124–3, Oct. 2012.

Paper Details

Date Published: 5 October 2015
PDF: 1 pages
Proc. SPIE 9555, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications, 955509 (5 October 2015); doi: 10.1117/12.2189149
Show Author Affiliations
Seth Bank, The Univ. of Texas at Austin (United States)
Scott J. Maddox, The Univ. of Texas at Austin (United States)
Wenlu Sun, Univ. of Virginia (United States)
Hari P. Nair, The Univ. of Texas at Austin (United States)
Joe C. Campbell, Univ. of Virginia (United States)

Published in SPIE Proceedings Vol. 9555:
Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications
Manijeh Razeghi; Dorota S. Temple; Gail J. Brown, Editor(s)

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