Share Email Print
cover

Proceedings Paper

Quantum well thickness variation investigation on optical and thermal performances of GaN LEDs
Author(s): Karunavani Sarukunaselan; Vithyacharan Retnasamy; Zaliman Sauli; Sarveshvaran Suppiah; Kamarudin Hussin; Steven Taniselass; Mukhzeer Shahimin
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Blue InGaN LED suffers from a severe efficiency droop at high current density and electron leakage is believed to be one of the primary causes of it. In this study, InGaN LED was simulated using Sentaurus TCAD. The effects of thickness of the quantum wells on the device performances were examined through simulation. Results of the simulations suggested that to achieve a low efficiency droop, the wells have to be thick.

Paper Details

Date Published: 8 September 2015
PDF: 6 pages
Proc. SPIE 9571, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems, 95710M (8 September 2015); doi: 10.1117/12.2189082
Show Author Affiliations
Karunavani Sarukunaselan, Univ. Malaysia Perlis (Malaysia)
Vithyacharan Retnasamy, Univ. Malaysia Perlis (Malaysia)
Zaliman Sauli, Univ. Malaysia Perlis (Malaysia)
Sarveshvaran Suppiah, Univ. Malaysia Perlis (Malaysia)
Kamarudin Hussin, Univ. Malaysia Perlis (Malaysia)
Steven Taniselass, Univ. Malaysia Perlis (Malaysia)
Mukhzeer Shahimin, Univ. Malaysia Perlis (Malaysia)


Published in SPIE Proceedings Vol. 9571:
Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems
Matthew H. Kane; Jianzhong Jiao; Nikolaus Dietz; Jian-Jang Huang, Editor(s)

© SPIE. Terms of Use
Back to Top