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Proceedings Paper

Quantum barrier thickness study on blue InGaN LED optical performance using Sentaurus
Author(s): Karunavani Sarukunaselan; Vithyacharan Retnasamy; Zaliman Sauli; Sarveshvaran Suppiah; Kamarudin Hussin; Steven Taniselass; Mukhzeer Shahimin
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Paper Abstract

Blue InGaN LEDs have a drawback whereby it suffers from efficiency droop at high current injection levels. One of the major factors of this droop behaviour is contributed by electron leakage. The aim of this study was to suppress electron leakage in the device by understanding how barrier thickness affects the carrier distribution in the device as well as the device performances. Simulation results obtained showed that thinner barrier increased the device’s efficiency since there was better electron confinement and tunnelling effect.

Paper Details

Date Published: 8 September 2015
PDF: 7 pages
Proc. SPIE 9571, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems, 95710Q (8 September 2015); doi: 10.1117/12.2189081
Show Author Affiliations
Karunavani Sarukunaselan, Univ. Malaysia Perlis (Malaysia)
Vithyacharan Retnasamy, Univ. Malaysia Perlis (Malaysia)
Zaliman Sauli, Univ. Malaysia Perlis (Malaysia)
Sarveshvaran Suppiah, Univ. Malaysia Perlis (Malaysia)
Kamarudin Hussin, Univ. Malaysia Perlis (Malaysia)
Steven Taniselass, Univ. Malaysia Perlis (Malaysia)
Mukhzeer Shahimin, Univ. Malaysia Perlis (Malaysia)

Published in SPIE Proceedings Vol. 9571:
Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems
Matthew H. Kane; Jianzhong Jiao; Nikolaus Dietz; Jian-Jang Huang, Editor(s)

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