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Proceedings Paper

Evaluation of different processing steps on the dark current of electron-injection detectors (Presentation Recording)

Paper Abstract

Our recently published results show a much reduced dark current and enhanced speed from our second-generation electron-Injection detectors, due to the introduction of an isolation method. However, these results have been limited to single-element detectors. A natural next step is to incorporate these new devices into a focal plane array (FPA), since we have already achieved very attractive results from an FPA based on the first-generation devices. Despite the high-performance characteristics of second generation devices, isolation introduces new processing steps and a robust procedure is required for realization of focal plane arrays (FPA) with good uniformity and yield. Here we report our systematic evaluation of the processing steps, and in particular the effect of the processing temperature, on the device dark current and uniformity. Our goal is to produce ultra-low dark current FPA based on isolated electron-injection detectors, and to approach single-photon sensitivity.

Paper Details

Date Published: 5 October 2015
PDF: 1 pages
Proc. SPIE 9555, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications, 95550A (5 October 2015); doi: 10.1117/12.2188755
Show Author Affiliations
Mohsen Rezaei, Northwestern Univ. (United States)
Sung Jun Jang, Northwestern Univ. (United States)
Hooman Mohseni, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 9555:
Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications
Manijeh Razeghi; Dorota S. Temple; Gail J. Brown, Editor(s)

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