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Proceedings Paper

Top-gate organic field-effect transistors fabricated on shape-memory polymer substrates
Author(s): Sangmoo Choi; Canek Fuentes-Hernandez; Cheng-Yin Wang; Andrew Wei; Walter Voit; Yadong Zhang; Stephen Barlow; Seth R. Marder; Bernard Kippelen
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Paper Abstract

We demonstrate top-gate organic field-effect transistors (OFETs) with a bilayer gate dielectric and doped contacts fabricated on shape-memory polymer (SMP) substrates. SMPs exhibit large variations in Young’s modulus dependent on temperature and have the ability to fix two or more geometric configurations when a proper stimulus is applied. These unique properties make SMPs desirable for three-dimensional shape applications of OFETs. The electrical properties of OFETs on SMP substrates are presented and compared to those of OFETs on traditional glass substrates.

Paper Details

Date Published: 31 August 2015
PDF: 5 pages
Proc. SPIE 9568, Organic Field-Effect Transistors XIV; and Organic Sensors and Bioelectronics VIII, 95680A (31 August 2015); doi: 10.1117/12.2188684
Show Author Affiliations
Sangmoo Choi, Georgia Institute of Technology (United States)
Canek Fuentes-Hernandez, Georgia Institute of Technology (United States)
Cheng-Yin Wang, Georgia Institute of Technology (United States)
Andrew Wei, The Univ. of Texas at Dallas (United States)
Walter Voit, The Univ. of Texas at Dallas (United States)
Yadong Zhang, Georgia Institute of Technology (United States)
Stephen Barlow, Georgia Institute of Technology (United States)
Seth R. Marder, Georgia Institute of Technology (United States)
Bernard Kippelen, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 9568:
Organic Field-Effect Transistors XIV; and Organic Sensors and Bioelectronics VIII
Ioannis Kymissis; Ruth Shinar; Luisa Torsi; Iain McCulloch; Oana D. Jurchescu, Editor(s)

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