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Proceedings Paper

Rashba spin-orbit effect and its electric field control at the surfaces and interfaces for spintronics applications (Presentation Recording)
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Paper Abstract

The Rashba effect [1] describes the momentum-dependent spin splitting of the electron states at a surface or interface. It is the combined result of the relativistic spin-orbit interaction (SOI) and the inversion-symmetry breaking. The control of the Rashba effect by an applied electric field is at the heart of the proposed Rashba-effect-based spintronics devices for manipulating the electron spinfor ma- nipulating the electron spin in the semiconductors. The effect is expected to be much stronger in the perovskite oxides owing to the presence of high-Z elements. In this talk, I will introduce the Rashba effect and discuss how the Rashba SOI at the surfaces and interfaces can be tuned by manipulating the two dimensional electron gas (2DEG) by an applied electric field. The effect can be understood in terms of a tight-binding model Hamiltonian for the d orbitals incorporating the effect of electric field in terms of effective orbital overlap parameters [3]. From first principles calculations we see that the Rashba SOI originates from the first few layers near the surface and it therefore can be altered by drawing the 2DEG to the surface or by pushing the 2DEG deeper into the bulk with an applied elec- tric field. These ideas will be illustrated by a comprehensive density-functional study of polar perovskite systems [4]. References [1] E. I. Rashba, Sov. Phys. Solid State 2, 1109 (1960) [2] A. Ohtomo and H. Hwang, Nature 427, 423 (2004); Z. Popovic, S. Satpathy, and R. Martin, Phys. Rev. Letts. 101, 256801 (2008) [3] K. V. Shanavas and S. Satpathy, Phys. Rev. Lett. 112, 086802 (2014); K. V. Shanavas, Z. S. Popovic, and S. Satpathy, Phys. Rev. B 90, 165108 (2014) [4] K. V. Shanavas, J. Electron Spectrosc., In press (2015)

Paper Details

Date Published: 5 October 2015
PDF: 1 pages
Proc. SPIE 9551, Spintronics VIII, 95510N (5 October 2015); doi: 10.1117/12.2188657
Show Author Affiliations
Sashi Satpathy, Univ. of Missouri (United States)
Kavungal Veedu Shanavas, Oak Ridge National Lab. (United States)


Published in SPIE Proceedings Vol. 9551:
Spintronics VIII
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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