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Proceedings Paper

HgTe colloidal quantum dot LWIR infrared photodetectors
Author(s): R. E. Pimpinella; A. Ciani; P. Guyot-Sionnest; C. Grein
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Paper Abstract

The majority of modern infrared photon imaging devices are based on epitaxially grown bulk semiconductor materials. Colloidal quantum dot (CQD)-based infrared devices provide great promise for significantly reducing cost as well as significantly increased operating temperatures of infrared imaging systems. In addition, CQD-based infrared devices greatly benefit from band gap tuning by controlling the CQD size rather than the composition. In this work, we investigate the absorption coefficient of HgTe CQD films as a function of temperature and cutoff wavelength. The optical absorption properties are predicted for defect-free HgTe films as well as films which vary from ideal.

Paper Details

Date Published: 26 August 2015
PDF: 7 pages
Proc. SPIE 9553, Low-Dimensional Materials and Devices, 95530K (26 August 2015); doi: 10.1117/12.2188333
Show Author Affiliations
R. E. Pimpinella, Sivananthan Labs., Inc. (United States)
A. Ciani, Sivananthan Labs., Inc. (United States)
P. Guyot-Sionnest, The Univ. of Chicago (United States)
C. Grein, Univ. of Illinois at Chicago (United States)


Published in SPIE Proceedings Vol. 9553:
Low-Dimensional Materials and Devices
Nobuhiko P. Kobayashi; A. Alec Talin; M. Saif Islam; Albert V. Davydov, Editor(s)

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