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Proceedings Paper

Modeling and analysis of hybrid pixel detector deficiencies for scientific applications
Author(s): Farah Fahim; Grzegorz W. Deptuch; James R. Hoff; Hooman Mohseni
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Paper Abstract

Semiconductor hybrid pixel detectors often consist of a pixellated sensor layer bump bonded to a matching pixelated readout integrated circuit (ROIC). The sensor can range from high resistivity Si to III-V materials, whereas a Si CMOS process is typically used to manufacture the ROIC. Independent, device physics and electronic design automation (EDA) tools are used to determine sensor characteristics and verify functional performance of ROICs respectively with significantly different solvers. Some physics solvers provide the capability of transferring data to the EDA tool. However, single pixel transient simulations are either not feasible due to convergence difficulties or are prohibitively long. A simplified sensor model, which includes a current pulse in parallel with detector equivalent capacitor, is often used; even then, spice type top-level (entire array) simulations range from days to weeks.

In order to analyze detector deficiencies for a particular scientific application, accurately defined transient behavioral models of all the functional blocks are required. Furthermore, various simulations, such as transient, noise, Monte Carlo, inter-pixel effects, etc. of the entire array need to be performed within a reasonable time frame without trading off accuracy. The sensor and the analog front-end can be modeling using a real number modeling language, as complex mathematical functions or detailed data can be saved to text files, for further top-level digital simulations. Parasitically aware digital timing is extracted in a standard delay format (sdf) from the pixel digital back-end layout as well as the periphery of the ROIC. For any given input, detector level worst-case and best-case simulations are performed using a Verilog simulation environment to determine the output. Each top-level transient simulation takes no more than 10-15 minutes. The impact of changing key parameters such as sensor Poissonian shot noise, analog front-end bandwidth, jitter due to clock distribution etc. can be accurately analyzed to determine ROIC architectural viability and bottlenecks. Hence the impact of the detector parameters on the scientific application can be studied.

Paper Details

Date Published: 28 August 2015
PDF: 6 pages
Proc. SPIE 9555, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications, 955517 (28 August 2015); doi: 10.1117/12.2188128
Show Author Affiliations
Farah Fahim, Northwestern Univ. (United States)
Grzegorz W. Deptuch, Fermi National Accelerator Lab. (United States)
James R. Hoff, Fermi National Accelerator Lab. (United States)
Hooman Mohseni, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 9555:
Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications
Manijeh Razeghi; Dorota S. Temple; Gail J. Brown, Editor(s)

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