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Proceedings Paper

Effect of the Pauli principle on photoelectron spin transport in p+ GaAs
Author(s): F. Cadiz; D. Paget; A. C. H. Rowe; L. Martinelli; S. Arscott
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Paper Abstract

In p+ GaAs thin films, under excitation by a tightly-focused laser, the spatial profile of the spin polarization is monitored as a function of excitation power. It is found that photoelectron diffusion depends on spin, as a direct consequence of the Pauli principle which causes a concentration dependence of the spin stiffness. Thermoelectric currents are also predicted to depend on spin under degeneracy (spin Soret currents), but these currents play a relatively small role in this case. The spin dependence of the mobility is also found weak. Conversely, ambipolar coupling with holes increases the steady-state photo-electron density at the place of excitation and therefore the amplitude of the degeneracy-induced polarization decrease at the place of excitation.

Paper Details

Date Published: 8 September 2015
PDF: 10 pages
Proc. SPIE 9551, Spintronics VIII, 955125 (8 September 2015); doi: 10.1117/12.2188080
Show Author Affiliations
F. Cadiz, Ecole Polytechnique, CNRS (France)
D. Paget, Ecole Polytechnique, CNRS (France)
A. C. H. Rowe, Ecole Polytechnique, CNRS (France)
L. Martinelli, Ecole Polytechnique, CNRS (France)
S. Arscott, Institut d’Electronique, de Microélectronique, et de Nanotechnologie, Univ. de Lille, CNRS (France)


Published in SPIE Proceedings Vol. 9551:
Spintronics VIII
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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