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Proceedings Paper

Efficiency improvement of the light-emitting diodes by the lateral overgrowth GaN on an AlN nanorod template
Author(s): Wen-Yi Lan; Yu-Feng Yin; Chen-Hung Tsai; Mu-Xin Ma; Hsiang-Wei Li; Wei-Chi Lai; JianJang Huang
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Paper Abstract

With the rapid development of GaN light-emitting diodes (LEDs), LEDs have been utilized in various ways. However, the quality of the GaN epi-structure has been a popular topic. In order to achieve higher internal quantum efficiency (IQE), LEDs have to be made with few defects during the epitaxy growth. Here we propose an AlN nanorod template grown on the sapphire substrate by vapor-liquid-solid (VLS) method. The voids near the AlN nanorods indicate a modification of dislocation with a lateral overgrowth. A strain relaxation and a better IQE in the epi-layer are observed in the Raman spectroscopy and temperature-dependent photoluminescence (PL). As a result, the IQE of the device with the proposed AlN nanorod template is increased 12.2% as compared with the reference sample without AlN nanorods.

Paper Details

Date Published: 8 September 2015
PDF: 7 pages
Proc. SPIE 9571, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems, 95710O (8 September 2015); doi: 10.1117/12.2188055
Show Author Affiliations
Wen-Yi Lan, National Taiwan Univ. (Taiwan)
Yu-Feng Yin, National Taiwan Univ. (Taiwan)
Chen-Hung Tsai, National Taiwan Univ. (Taiwan)
Mu-Xin Ma, National Cheng Kung Univ. (Taiwan)
Hsiang-Wei Li, National Taiwan Univ. (Taiwan)
Wei-Chi Lai, National Cheng Kung Univ. (Taiwan)
JianJang Huang, National Taiwan Univ. (Taiwan)

Published in SPIE Proceedings Vol. 9571:
Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems
Matthew H. Kane; Jianzhong Jiao; Nikolaus Dietz; Jian-Jang Huang, Editor(s)

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