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Proceedings Paper

State-of-the-art cryogenic CTE measurements of ultra-low thermal expansion materials
Author(s): Thomas Middelmann; Alexander Walkov; René Schödel
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Paper Abstract

The accurate characterization of material properties as thermal expansion, temporal length drift and relaxation is essential for semiconductor industry or for aerospace applications. PTB’s absolute length measuring Ultra Precision Interferometer enables investigation of these properties with high accuracy in the temperature range from 7 K to about 300 K. The Coefficient of Thermal Expansion (CTE) can be measured with uncertainties mainly below 3 × 10-9/K. In this paper we give an overview about the latest state of our experimental setup and evaluation methods. Recent measurement results on silicon carbide ceramics (SiC-100, HB-Cesic), silicon nitride ceramics (SN-PG and SN-Pu) and single crystal silicon (SCS), the latter being the reference material of choice in this regime, are presented.

Paper Details

Date Published: 2 September 2015
PDF: 10 pages
Proc. SPIE 9574, Material Technologies and Applications to Optics, Structures, Components, and Sub-Systems II, 95740N (2 September 2015); doi: 10.1117/12.2187928
Show Author Affiliations
Thomas Middelmann, Physikalisch-Technische Bundesanstalt (Germany)
Alexander Walkov, Physikalisch-Technische Bundesanstalt (Germany)
René Schödel, Physikalisch-Technische Bundesanstalt (Germany)


Published in SPIE Proceedings Vol. 9574:
Material Technologies and Applications to Optics, Structures, Components, and Sub-Systems II
Matthias Krödel; Joseph L. Robichaud; William A. Goodman, Editor(s)

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