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Proceedings Paper

Optical memory effect in ZnO nanowire based organic bulk heterojunction devices
Author(s): Anand Kumar Santhanakrishna; Arash Takshi
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Paper Abstract

Due to the required established field to separate photogenerated electrons and holes, the current- voltage (I-V) characteristic in almost all photovoltaic devices in dark is an exponential curve. Upon illumination, the shape of the curve remains almost the same, but the current shifts due to the photocurrent. Also, because of the lack of any storage mechanism, the I-V curve returns to the dark characteristic immediately after light cessation. Here, we are reporting a case study performed on a photo-electric memory effect in an organic bulk hetrojuction device made of ZnO nanowires as the electron transport layer under ambient conditions and within a sealed transfer box filled with nitrogen. The I-V characteristic in dark and light showed a unique change from a rectifying response in dark to a resistive behavior in light. Additionally, after light cessation, a memory effect was observed with a slow transition from the resistive to rectifying response same as the original dark characteristic. The memory effect and its I-V characteristics were tested for the two cases. For practical applications as a photo memory device, further experiments are required to gain a better understanding of the mechanism behind the observed memory effect for the two different cases.

Paper Details

Date Published: 17 September 2015
PDF: 8 pages
Proc. SPIE 9569, Printed Memory and Circuits, 95690O (17 September 2015); doi: 10.1117/12.2187689
Show Author Affiliations
Anand Kumar Santhanakrishna, Univ. of South Florida (United States)
Arash Takshi, Univ. of South Florida (United States)

Published in SPIE Proceedings Vol. 9569:
Printed Memory and Circuits
Emil J. W. List Kratochvil, Editor(s)

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