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Proceedings Paper

Si based mid-infrared GeSn photo detectors and light emitters
Author(s): Wei Du; Thach Pham; Joe Margetis; Huong Tran; Seyed A. Ghetmiri; Aboozar Mosleh; Greg Sun; Richard A. Soref; John Tolle; Hameed A. Naseem; Baohua Li; Shui-Qing Yu
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Paper Abstract

In this work, high performance GeSn photoconductor and light emitting diodes (LED) have been demonstrated. For the photoconductor, the high responsivity was achieved due to high photoconductive gain, which is attributed to the novel optical and electrical design. The longwave cutoff at 2.4 μm was also observed at room temperature. For LED, temperature-dependent study was conducted. The electroluminescence (EL) spectra at different temperatures were obtained and EL peak shift was observed. Moreover, the emission power at different temperatures was measured. High power emission at 2.1 μm was achieved.

Paper Details

Date Published: 28 August 2015
PDF: 9 pages
Proc. SPIE 9555, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications, 95550E (28 August 2015); doi: 10.1117/12.2187540
Show Author Affiliations
Wei Du, Univ. of Arkansas (United States)
Thach Pham, Univ. of Arkansas (United States)
Joe Margetis, ASM America Inc. (United States)
Huong Tran, Univ. of Arkansas (United States)
Seyed A. Ghetmiri, Univ. of Arkansas (United States)
Aboozar Mosleh, Univ. of Arkansas (United States)
Greg Sun, Univ. of Massachusetts Boston (United States)
Richard A. Soref, Univ. of Massachusetts Boston (United States)
John Tolle, ASM America Inc. (United States)
Hameed A. Naseem, Univ. of Arkansas (United States)
Baohua Li, Arktonics, LLC (United States)
Shui-Qing Yu, Univ. of Arkansas (United States)

Published in SPIE Proceedings Vol. 9555:
Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications
Manijeh Razeghi; Dorota S. Temple; Gail J. Brown, Editor(s)

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