Share Email Print
cover

Proceedings Paper

Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes
Author(s): M. Mandurrino; M. Goano; S. Dominici; M. Vallone; F. Bertazzi; G. Ghione; M. Bernabei; L. Rovati; G. Verzellesi; M. Meneghini; G. Meneghesso; E. Zanoni
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We present results from a combined experimental and numerical investigation of trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes. We show that the excess forward leakage current in single-quantum-well InGaN/GaN light-emitting diodes can be explained by non-local tunneling-into-traps processes and subsequent non-radiative recombination with free carriers.

Paper Details

Date Published: 8 September 2015
PDF: 6 pages
Proc. SPIE 9571, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems, 95710U (8 September 2015); doi: 10.1117/12.2187443
Show Author Affiliations
M. Mandurrino, Politecnico di Torino (Italy)
M. Goano, Politecnico di Torino (Italy)
S. Dominici, Politecnico di Torino (Italy)
M. Vallone, Politecnico di Torino (Italy)
F. Bertazzi, Politecnico di Torino (Italy)
G. Ghione, Politecnico di Torino (Italy)
M. Bernabei, Univ. degli Studi di Modena e Reggio Emilia (Italy)
L. Rovati, Univ. degli Studi di Modena e Reggio Emilia (Italy)
G. Verzellesi, Univ. degli Studi di Modena e Reggio Emilia (Italy)
M. Meneghini, Univ. degli Studi di Padova (Italy)
G. Meneghesso, Univ. degli Studi di Padova (Italy)
E. Zanoni, Univ. degli Studi di Padova (Italy)


Published in SPIE Proceedings Vol. 9571:
Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems
Matthew H. Kane; Jianzhong Jiao; Nikolaus Dietz; Jian-Jang Huang, Editor(s)

© SPIE. Terms of Use
Back to Top