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Proceedings Paper

Impact of thermal treatment on electrical characteristics and charge collection efficiency of Me-GaAs:Cr-Me x-ray sensors
Author(s): V. Novikov; A. Zarubin; O. Tolbanov; A. Tyazhev; A. Lozinskaya; D. Budnitsky; M. Skakunov
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Paper Abstract

In this article the results of experimental investigations of resistivity, charge collection efficiency, mobility lifetime μ n·τn product and I-V curves dependencies on thermal treatment of Me-GaAs:Cr-Me X-ray sensors are presented. Experimental samples were the pad sensors with active area 0.1-0.25 cm2 and active layer thickness of 400-500 μm. The μ n·τn product was estimated using charge collection efficiency dependency on bias measured with the use of gammarays of 241Am source.

It was shown that thermal treatment in the temperature range of 200-500°C doesn’t lead to a sufficient degradation of sensor’s characteristics and can be used in array detectors processing.

Paper Details

Date Published: 26 August 2015
PDF: 7 pages
Proc. SPIE 9593, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVII, 95930F (26 August 2015); doi: 10.1117/12.2187181
Show Author Affiliations
V. Novikov, Tomsk State Univ. (Russian Federation)
A. Zarubin, Tomsk State Univ. (Russian Federation)
O. Tolbanov, Tomsk State Univ. (Russian Federation)
A. Tyazhev, Tomsk State Univ. (Russian Federation)
A. Lozinskaya, Tomsk State Univ. (Russian Federation)
D. Budnitsky, Tomsk State Univ. (Russian Federation)
M. Skakunov, Tomsk State Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 9593:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVII
Larry Franks; Ralph B. James; Michael Fiederle; Arnold Burger, Editor(s)

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